Temperature calculation of ion implanted silicon during rapid thermal annealing using iodine-tungsten lamp 离子注入硅的碘钨灯快速热退火温度计算
The relationship among annealing temperature, substrate temperature and power of iodine-tungsten lamp during rapid thermal annealing of ion implanted silicon by an ( isothermal) model is analysed, according to equilibrium between incident power density and radiative power density. 利用等温模型,根据入射能流密度与辐射损失能流密度之间的平衡,得出了离子注入硅的碘钨灯快速热退火的退火温度与衬底温度以及碘钨灯功率的关系。
The process of annealing is studied according to the need of exceed high pressure gas discharge lamp. 结合超高压气体放电光源的要求,对玻壳精密退火工艺进行研究。